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參數(shù)資料
| 型號(hào)： | PSD834F4-70 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Flash In-System Programmable (ISP) Peripherals for 8-bit MCUs, 5V |
| 中文描述： | Flash在系統(tǒng)可編程（ISP）的周邊8位MCU，5V的 |
| 文件頁(yè)數(shù)： | 67/110頁(yè) |
| 文件大小： | 1737K |
| 代理商： | PSD834F4-70 |
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PSD813F2, PSD833F2, PSD834F2, PSD853F2, PSD854F2
RESET TIMING AND DEVICE STATUS AT RESET
Power-Up Reset
Upon Power-up, the PSD requires a Reset (RE-
SET) pulse of duration t
NLNH-PO
after V
CC
is
steady. During this period, the device loads inter-
nal configurations, clears some of the registers
and sets the Flash memory into Operating mode.
After the rising edge of Reset (RESET), the PSD
remains in the Reset mode for an additional peri-
od, t
OPR
, before the first memory access is al-
lowed.
The Flash memory is reset to the READ Mode
upon Power-up. Sector Select (FS0-FS7 and
CSBOOT0-CSBOOT3) must all be Low, Write
Strobe (WR, CNTL0) High, during Power On Re-
set for maximum security of the data contents and
to remove the possibility of a byte being written on
the first edge of Write Strobe (WR, CNTL0). Any
Flash memory WRITE cycle initiation is prevented
automatically when V
CC
is below V
LKO
.
Warm Reset
Once the device is up and running, the device can
be reset with a pulse of a much shorter duration,
t
NLNH
.
The same t
OPR
period is needed before the device
is operational after warm reset. Figure
34
shows
the timing of the Power-up and warm reset.
I/O Pin, Register and PLD Status at Reset
Table 33., page 68
shows the I/O pin, register and
PLD status during Power On Reset, warm reset
and Power-down mode. PLD outputs are always
valid during warm reset, and they are valid in Pow-
er On Reset once the internal PSD Configuration
bits are loaded. This loading of PSD is completed
typically long before the V
CC
ramps up to operat-
ing level. Once the PLD is active, the state of the
outputs are determined by the PSDabel equa-
tions.
Reset of Flash Memory Erase and Program
Cycles (on the PSD834Fx)
A Reset (RESET) also resets the internal Flash
memory state machine. During a Flash memory
Program or Erase cycle, Reset (RESET) termi-
nates the cycle and returns the Flash memory to
the Read Mode within a period of t
NLNH-A
.
Figure 34. Reset (RESET) Timing
tNLNH-PO
Power-On Reset
tOPR
AI02866b
RESET
tNLNH
tNLNH-A
Warm Reset
tOPR
V
CC
V
CC
(min)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PSD854F4-70 | Flash In-System Programmable (ISP) Peripherals for 8-bit MCUs, 5V |
| PSD834F4-12 | Flash In-System Programmable (ISP) Peripherals for 8-bit MCUs, 5V |
| PSD854F4-12 | Flash In-System Programmable (ISP) Peripherals for 8-bit MCUs, 5V |
| PSD814F4-15 | Flash In-System Programmable (ISP) Peripherals for 8-bit MCUs, 5V |
| PSD834F4-15 | CONNECTOR, 14 PIN, DBL ROW, T/H, R/A |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PSD835G2-70U | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 5.0V 4M 70ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2-90U | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2-90UI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2V-12UI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 3.0V 4M 120ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2V-90U | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 3.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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