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參數資料
型號: PSD8532V12MIT
廠商: 意法半導體
英文描述: High Speed CMOS Logic Triple 3-Input NAND Gates 14-PDIP -55 to 125
中文描述: Flash在系統可編程ISP的外設的8位微控制器
文件頁數: 67/110頁
文件大小: 1737K
代理商: PSD8532V12MIT
67/110
PSD813F2, PSD833F2, PSD834F2, PSD853F2, PSD854F2
RESET TIMING AND DEVICE STATUS AT RESET
Power-Up Reset
Upon Power-up, the PSD requires a Reset (RE-
SET) pulse of duration t
NLNH-PO
after V
CC
is
steady. During this period, the device loads inter-
nal configurations, clears some of the registers
and sets the Flash memory into Operating mode.
After the rising edge of Reset (RESET), the PSD
remains in the Reset mode for an additional peri-
od, t
OPR
, before the first memory access is al-
lowed.
The Flash memory is reset to the READ Mode
upon Power-up. Sector Select (FS0-FS7 and
CSBOOT0-CSBOOT3) must all be Low, Write
Strobe (WR, CNTL0) High, during Power On Re-
set for maximum security of the data contents and
to remove the possibility of a byte being written on
the first edge of Write Strobe (WR, CNTL0). Any
Flash memory WRITE cycle initiation is prevented
automatically when V
CC
is below V
LKO
.
Warm Reset
Once the device is up and running, the device can
be reset with a pulse of a much shorter duration,
t
NLNH
.
The same t
OPR
period is needed before the device
is operational after warm reset. Figure
34
shows
the timing of the Power-up and warm reset.
I/O Pin, Register and PLD Status at Reset
Table 33., page 68
shows the I/O pin, register and
PLD status during Power On Reset, warm reset
and Power-down mode. PLD outputs are always
valid during warm reset, and they are valid in Pow-
er On Reset once the internal PSD Configuration
bits are loaded. This loading of PSD is completed
typically long before the V
CC
ramps up to operat-
ing level. Once the PLD is active, the state of the
outputs are determined by the PSDabel equa-
tions.
Reset of Flash Memory Erase and Program
Cycles (on the PSD834Fx)
A Reset (RESET) also resets the internal Flash
memory state machine. During a Flash memory
Program or Erase cycle, Reset (RESET) termi-
nates the cycle and returns the Flash memory to
the Read Mode within a period of t
NLNH-A
.
Figure 34. Reset (RESET) Timing
tNLNH-PO
Power-On Reset
tOPR
AI02866b
RESET
tNLNH
tNLNH-A
Warm Reset
tOPR
V
CC
V
CC
(min)
相關PDF資料
PDF描述
PSD8532V12MT High Speed CMOS Logic Triple 3-Input NAND Gates 14-PDIP -55 to 125
PSD8532V15JT High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125
PSD8532V15MT High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125
PSD8532V20JT High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125
PSD833212JIT Flash In-System Programmable ISP Peripherals For 8-bit MCUs
相關代理商/技術參數
參數描述
PSD853F2-70J 功能描述:SPLD - 簡單可編程邏輯器件 5.0V 1M 70ns RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風格:Through Hole 封裝 / 箱體:DIP-24
PSD853F2-70M 功能描述:CPLD - 復雜可編程邏輯器件 5.0V 1M 70ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD853F2-90J 功能描述:CPLD - 復雜可編程邏輯器件 5.0V 1M 90ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD853F2-90JI 功能描述:CPLD - 復雜可編程邏輯器件 5.0V 1M 90ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD853F2-90M 功能描述:CPLD - 復雜可編程邏輯器件 5.0V 1M 90ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
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