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參數資料
| 型號： | PSMN004-25P |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel logic level TrenchMOS transistor |
| 中文描述： | 75 A, 25 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 101K |
| 代理商： | PSMN004-25P |
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS
transistor PSMN004-25B, PSMN004-25P
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DSS
= 25 V
’Trench’
technology
Very low on-state resistance
Fast switching
Low thermal resistance
I
D
= 75 A
R
DS(ON)
≤
4.3 m
(V
GS
= 10 V)
R
DS(ON)
≤
5 m
(V
GS
= 5 V)
GENERAL DESCRIPTION
SiliconMAX
products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
d.c. to d.c. converters
switched mode power supplies
The PSMN004-25P is supplied in the SOT78 (TO220AB) conventional leaded package.
The PSMN004-25B is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2
PAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Continuous gate-source
voltage
V
GSM
Peak pulsed gate-source
voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
MAX.
25
25
±
15
UNIT
V
V
V
T
j
≤
150 C
-
±
20
V
T
mb
= 25 C; V
GS
= 5 V
T
mb
= 100 C; V
GS
= 5 V
T
mb
= 25 C
T
mb
= 25 C
-
-
-
-
75
2
75
2
240
230
175
A
A
A
W
C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
- 55
d
g
s
1
3
tab
2
1 2 3
tab
1
It is not possible to make connection to pin:2 of the SOT404 package
2
maximum continuous current limited by package
October 1999
1
Rev 1.100
相關PDF資料 |
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|---|---|
| PSMN004-36B | N-channel enhancement mode field-effect transistor |
| PSMN004-36P | N-channel enhancement mode field-effect transistor |
| PSMN004-55W | N-channel logic level TrenchMOS transistor |
| PSMN004-60P | N-channel enhancement mode field-effect transistor |
| PSMN005-25D | N-channel logic level TrenchMOS transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PSMN004-36B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PSMN004-36B /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN004-36B,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN004-36P | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PSMN004-55W | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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