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參數資料
| 型號： | PSMN005-75P |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. |
| 中文描述： | 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 1/13頁 |
| 文件大小： | 271K |
| 代理商： | PSMN005-75P |
PSMN005-75P/75B
N-channel enhancement mode field-effect transistor
Rev. 01 — 26 April 2002
Product data
1.
Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS technology.
Product availability:
PSMN005-75P in SOT78 (TO-220AB)
PSMN005-75B in SOT404 (D
2
-PAK).
2.
Features
I
Low on-state resistance
I
Fast switching.
3.
Applications
I
High frequency computer motherboard DC to DC converters
I
OR-ing applications.
4.
Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 and SOT404, simplified outline and symbol
Description
Simplified outline
gate (g)
drain (d)
source (s)
drain (d)
Symbol
SOT78 (TO-220AB)
SOT404 (D
2-
PAK)
[1]
MBK106
1 2
mb
3
1
3
2
MBK116
mb
s
d
g
MBB076
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PSMN005-75P,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN005-75P | 制造商:NXP Semiconductors 功能描述:MOSFET N TO-220 |
| PSMN006-20K | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS SiliconMAX ultra low level FET |
| PSMN006-20K /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN006-20K,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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