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參數(shù)資料
| 型號(hào)： | PSMN040-200W |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 50 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | PSMN040-200W |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PSMN040-200W
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’
technology
Very low on-state resistance
Fast switching
Low thermal resistance
V
DSS
= 200 V
I
D
= 50 A
R
DS(ON)
≤
40 m
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
SiliconMAX
productsusethelatest
Philips
Trench
achieve
the
lowest
on-state
resistance
package at each voltage rating.
PIN
DESCRIPTION
technology
to
possible
in
1
gate
each
2
drain
Applications:-
d.c. to d.c. converters
switched mode power supplies
3
source
tab
drain
The PSMN040-200W is supplied in
the SOT429 (TO247) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
±
20
50
36
200
300
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 50 A;
t
p
= 100
μ
s; T
j
prior to avalanche = 25C;
V
≤
25 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:15
MIN.
-
MAX.
661
UNIT
mJ
I
AS
Non-repetitive avalanche
current
-
50
A
d
g
s
2
3
1
August 1999
1
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PSMN040-200W,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN041-80YLX | 制造商:NXP Semiconductors 功能描述:PSMN041-80YL/LFPAK/REEL7// - Tape and Reel |
| PSMN045-80YS | 制造商:NXP Semiconductors 功能描述:MOSFETN CH80V24ALFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,80V,24A,LFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,80V,24A,LFPAK, Transistor Polarity:N Channel, Continuous Drain Curre |
| PSMN045-80YS,115 | 功能描述:MOSFET N-CHAN 80V 17A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN050-80BS | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 80V 22A D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 80V, 22A, D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 80V, 22A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; No. of Pins:3 ;RoHS Compliant: Yes |
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