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參數資料
型號: PTF102003
元件分類: MOSFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 30V的N溝道的PowerTrench MOSFET的
文件頁數: 1/6頁
文件大?。?/td> 77K
代理商: PTF102003
1
RF Specifications
(Guaranteed)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 26 V, P
OUT
= 3 W, I
DQ
= 125 mA, f = 1930, 1990 MHz)
Output Power at 1 dB Compression
(V
DD
= 26 V, I
DQ
= 125 mA, f = 1990 MHz)
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 125 mA, f = 1990 MHz)
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 125 mA, f = 1990 MHz
—all phase angles at frequency of test)
G
ps
10
dB
P-1dB
12
Watts
38
%
10:1
All published data at T
CASE
= 25°C unless otherwise indicated.
PTF 10041
GOLDMOS
Field Effect Transistor
12 Watts, 1.99 GHz
PTF10041
Package 20249
0
2
4
6
8
10
12
14
16
0.0
0.5
1.0
1.5
2.0
2.5
Input Power (Watts)
O
V
DD
= 26 V
I
= 125 mA
f = 1990 MHz
Typical Output Power vs. Input Power
Description
The PTF 10041 is a 12–watt
GOLDMOS
FET intended for large
signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38%
efficiency with 10 dB minimum gain. Nitride surface passivation and
full gold metallization ensure excellent device lifetime and reliability.
Guaranteed Performance at 1.99 GHz, 26 V
DS
- Output Power = 12 Watts Min
- Power Gain = 10 dB Min
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
Back Side Common Source
100% Lot Traceability
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