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參數資料
| 型號： | PVD1354 |
| 廠商： | International Rectifier |
| 英文描述： | Microelectronic Power IC PHOTOVOLTAIC RELAY SINGLE POLE 500MA 0-100V DC |
| 中文描述： | 光伏電源IC微電子繼電器單極500mA的0 - 100V的直流 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 86K |
| 代理商： | PVD1354 |
Data Sheet No. PD10024E
Series PVD13
Microelectronic Power IC
Single-Pole, 500mA, 0-100V DC
General Description
The Photovoltaic DC Relay (PVD) is a single-pole,
normally open solid state replacement for electro-
mechanical relays used for general purpose switch-
ing of analog signals. It utilizes as an output switch a
unique bidirectional (AC or DC) MOSFET power IC
termed a BOSFET. The BOSFET is controlled by a
photovoltaic generator of novel construction, which
is energized by radiation from a dielectrically iso-
lated light emitting diode (LED).
The PVD overcomes the limitations of both conven-
tional and reed electromechanical relays by offering
the solid state advantages of long life, high operat-
ing speed, low pick-up power, bounce-free opera-
tion, low thermal voltages and miniaturization. These
advantages allow product improvement and design
innovations in many applications such as process
control, multiplexing, telecommunications, automatic
test equipment and data acquisition.
The PVD can switch analog signals from thermo-
couple level to 100 volts peak DC. Signal frequen-
cies into the RF range are easily controlled and
switching rates up to 2kHz are achievable. The ex-
tremely small thermally generated offset voltages
allow increased measurement accuracies.
Unique silicon technology developed by International
Rectifier forms the heart of the PVD. The monolithic
BOSFET contains a bidirectional N-channel power
MOSFET output structure. In addition, this power IC
chip has input circuitry for fast turn-off and gate pro-
tection functions. This section of the BOSFET chip
utilizes both bipolar and MOS technology to form
NPN transistors, P-channel MOSFETs, resistors, di-
odes and capacitors.
The photovoltaic generator similarly utilizes a unique
International Rectifier alloyed multijunction structure.
The excellent current conversion efficiency of this
technique results in the very fast response of the
PVD microelectronic power IC relay.
This advanced semiconductor technology has cre-
ated a radically new control device. Designers can
now develop switching systems to new standards of
electrical performance and mechanical compactness.
Features
BOSFET Power IC
I
10
10
Operations
I
300μsec Operating Time
I
3 milliwatts Pick-Up Power
I
1000V/μsec dv/dt
I
Bounce-Free
I
8-pin DIP Package
I
-40°C to 85°C
I
UL recognized
I
Part Identification
Part Number
Operating
Voltage (DC)
Sensitivity
Off-State
Resistance
10
8
Ohms
PVD1352
0 – 100V
5 mA
PVD1354
10
10
Ohms
Replaced by PVD13N
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PVD1354N | 制造商:International Rectifier 功能描述:Relay SSR 25mA DC-IN 0.55A 100V DC-OUT 4-Pin PDIP Tube 制造商:International Rectifier 功能描述:IC RELAY PHOTOVO 100V 550MA 8DIP |
| PVD1354NPBF | 功能描述:固態繼電器-PCB安裝 100V 1 Form A Photo Voltaic Relay RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負載電壓額定值:40 V 負載電流額定值:120 mA 觸點形式:1 Form A (SPST-NO) 輸出設備:MOSFET 封裝 / 箱體:USOP-4 安裝風格:SMD/SMT |
| PVD1354NS | 制造商:International Rectifier 功能描述:IC RELAY PHOTOVO 100V 550MA 8SMD 制造商:Int'L Rectifier 功能描述:Relay SSR 25mA DC-IN 0.55A 100V DC-OUT 4-Pin MDIP SMD Tube |
| PVD1354NSPBF | 功能描述:固態繼電器-PCB安裝 100V 1 Form A Photo Voltaic Relay RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負載電壓額定值:40 V 負載電流額定值:120 mA 觸點形式:1 Form A (SPST-NO) 輸出設備:MOSFET 封裝 / 箱體:USOP-4 安裝風格:SMD/SMT |
| PVD13N | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET㈢ Power MOSFET Photovoltaic Relay Single-Pole, Normally-Open 0-100V DC, 550mA |
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