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參數(shù)資料
| 型號(hào)： | Q60215-Y1112 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| 中文描述： | 叩- Silizium - Fototransistor硅npn型光電晶體管 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 333K |
| 代理商： | Q60215-Y1112 |
Semiconductor Group
239
BPY 62
Grenzwerte
Maximum Ratings
Bezeichnung
Description
Symbol
Symbol
T
op
;
T
stg
Wert
Value
Einheit
Unit
°
C
Betriebs- und Lagertemperatur
Operating and storage temperature range
– 55 ... + 125
Lttemperatur bei Tauchltung
Ltstelle
≥
2 mm vom Gehuse,
Ltzeit
t
≤
5 s
Dip soldering temperature
≥
2 mm distance
from case bottom, soldering time
t
≤
5 s
Lttemperatur bei Kolbenltung
Ltstelle
≥
2 mm vom Gehuse,
Ltzeit
t
≤
3 s
Iron soldering temperature
≥
2 mm distance
from case bottom, soldering time
t
≤
3 s
Kollektor-Emitterspannung
Collector-emitter voltage
T
S
260
°
C
T
S
300
°
C
V
CE
50
V
Kollektorstrom
Collector current
Kollektorspitzenstrom,
τ <
10
μ
s
Collector surge current
I
C
100
mA
I
CS
200
mA
Emitter-Basisspannung
Emitter-base voltage
Verlustleistung,
T
A
= 25
°
C
Total power dissipation
V
EB
7
V
P
tot
200
mW
Wrmewiderstand
Thermal resistance
R
thJA
500
K/W
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| Q60215-Y1113 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q60215Y1113 | 功能描述:光電晶體管 RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| Q60215-Y1113 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60215-Y111-S4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y111-S5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y62 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
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