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參數(shù)資料
| 型號： | Q60215-Y1113 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| 中文描述： | 叩- Silizium - Fototransistor硅npn型光電晶體管 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 333K |
| 代理商： | Q60215-Y1113 |
Semiconductor Group
241
BPY 62
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen
Ziffern gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished
by arabian figures.
1)
I
PCEmin
ist der minimale Fotostrom der jeweiligen Gruppe
1)
I
PCEmin
is the min. photocurrent of the specified group
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
-2
-3
-4
-5
Fotostrom,
λ =
950 nm
Photocurrent
E
e
= 0.5 mW/cm
2
,
V
CE
= 5 V
E
v
= 1000 Ix, Normlicht/standard light
A,
V
CE
= 5 V
Anstiegszeit/Abfallzeit
Rise and fall time
I
C
= 1 mA,
V
CC
= 5 V,
R
L
= 1 k
Kollektor-Emitter-Sttigungsspannung
Collector-emitter saturation voltage
I
C
=
I
PCEmin
1)
×
0.3,
E
e
= 0.5 mW/cm
2
Stromverstrkung
Current gain
E
e
= 0.5 mW/cm
2
,
V
CE
= 5 V
I
PCE
I
PCE
0.5 ... 1.0
3.0
0.8 ... 1.6
4.6
1.25 ... 2.5
7.2
≥
2.0
11.4
mA
mA
t
r
,
t
f
5
7
9
12
μ
s
V
CEsat
150
150
160
180
mV
I
PCE
I
PCB
170
270
420
670
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