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參數資料
| 型號： | Q62702-A0960 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
| 中文描述： | 硅肖特基二極管（星展混頻器應用到12 GHz低噪聲系數中屏障型） |
| 文件頁數： | 11/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-A0960 |
BGC420
High Frequency Products
11
Edition A13, 05/99
Package
Published by
Infineon Technologies AG i Gr.,
Bereichs Kommunikation
St.-Martin-Strasse 76,
D-81541 München
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change
reserved.
We hereby disclaim any and all warranties, including
but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated
herein.
Infineon Technologies is an approved CECC
manufacturer.
Information
For further information on technology, delivery terms
and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or
our Infineon Technologies Representatives
worldwide (see address list).
Warnings
Due to technical requirements components may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be
used in life-support devices or systems with the
express written approval of Infineon Technologies, if
a failure of such components can reasonably be
expected to cause the failure of that life-support
device or system, or to affect the safety or
effectiveness of that device or system. Life support
devices or systems are intended to be implanted in
the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or
other persons may be endangered.
.
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| Q62702-A1004 | Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
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| Q62702-A910 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A940 | Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
| Q62702-A971 | Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies.) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-A1004 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
| Q62702-A1006 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators) |
| Q62702-A1010 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| Q62702-A1017 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators) |
| Q62702-A1025 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
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