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參數(shù)資料
| 型號： | Q62702-A1006 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators) |
| 中文描述： | 交叉環(huán)四硅肖特基二極管（高級雙平衡混頻器，探測器和調(diào)制器相壘二極管） |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-A1006 |
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-A1010 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| Q62702-A1017 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators) |
| Q62702-A1025 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1028 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) |
| Q62702-A1030 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Switching Diode Array (For high speed switching applications Common cathode) |
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