- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄361202 > Q62702-A1028 (SIEMENS AG) Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) PDF資料下載
參數(shù)資料
| 型號(hào)： | Q62702-A1028 |
| 廠(chǎng)商： | SIEMENS AG |
| 英文描述： | Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
| 中文描述： | 硅肖特基二極管（低的探測(cè)器高達(dá)千兆赫的頻率壘二極管） |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 101K |
| 代理商： | Q62702-A1028 |
BGC420
High Frequency Products
1
Edition A13, 05/99
Type
Marking
Ordering Code
(8-mm taped)
Q62702-G0092
Pin Configuration
(circuit Diagram)
see below
Package
BGC420
42s
SCT598
Description
The BGC420 is a silicon self biased RF Transistor (Q1). It offers an adjustable collector current
nearly independent from device voltage in the range from 2.0V to 4.5V. Additionally a control pin
(Vc) for switching the device off is provided. The collector current can be adjusted by connecting a
resistor (Rx) between Vcc and Vr.
Self-Biased BFP420
l
SIEGET
25- Technology
l
Small SCT598-Package
l
Control Pin For Switching The Device Off
l
Current Easy Adjustable By An External Resistor
l
Voltage Independent Current (2V – 4.5V)
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe
handling precautions!
Equivalent Circuit
RFin
RFout
Q1
GND
Active
Bias
Circuit
Vb
Vc
Vcc
Vr
Pin Connections, SCT598
Vr,5
RFout,6
GND,7
Vc, 8
4,Vcc
3, Vb
2, GND
1,RFin
Note: Top View
VPW05982
7
5
2
3
1
4
6
8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-A1030 | Silicon Switching Diode Array (For high speed switching applications Common cathode) |
| Q62702-A1031 | Silicon Switching Diode Array (For high speed switching applications Common anode) |
| Q62702-A1036 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1037 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1038 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-A1030 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon Switching Diode Array (For high speed switching applications Common cathode) |
| Q62702-A1031 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon Switching Diode Array (For high speed switching applications Common anode) |
| Q62702-A1036 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1037 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1038 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。