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參數(shù)資料
| 型號(hào)： | Q62702-A1162 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
| 中文描述： | 硅肖特基二極管（對(duì)于低損耗，快速恢復(fù)，保護(hù)米，偏見隔離和夾緊應(yīng)用集成擴(kuò)散保護(hù)環(huán)） |
| 文件頁(yè)數(shù)： | 8/11頁(yè) |
| 文件大小： | 101K |
| 代理商： | Q62702-A1162 |
BGC420
High Frequency Products
8
Edition A13, 05/99
* Internal Resistors
R1
3 Vc
R2
Vr 2
R3
Vb 0
R4
Vb rfin
47k
500
10k
2.7k
TC=-0.0006,0.0000025
TC=-0.0006,0.0
TC=-0.0006,0.0000025
TC=-0.0006,0.0
* External Resistors
Rx
Vcc Vr
Rout
vout 0
Rin
vin 0
{R}
50
50
TC=+0.000050,0.0
* External Capacitors
C2
C3
C7 rfin vin
C6
rfout vout
Vb 0
Vr 0
1nF
100pF
220pF
220pF
* Inductors (external)
L1
Vr rfout
100nH
* Transistors
Q1
rfout rfin 0
X2
2 3 Vb 0
X3
Vcc 5 5 0
X4
5 3 3 0
BFP420
8PL18
2PL18
2PL18
.PROBE
.MODEL BFP420 NPN(
+ IS = 2.0045e-16 BF = 72.534
+ VAF = 28.383 IKF = 0.48731 ISE = 1.9049e-14
+ NE = 2.0518 BR = 7.8287 NR = 1.3325
+ VAR = 19.705 IKR = 0.69141 ISC = 1.9237e-17
+ NC = 1.1724 RB = 3.4849 IRB = 0.00072983
+ RBM = 8.5757 RE = 0.31111 RC = 0.10105
+ CJE = 1.8063e-15 VJE = 0.8051 MJE = 0.46576
+ TF = 6.7661e-12 XTF = 0.42199 VTF = 0.23794
+ ITF = 0.001 PTF = 0 CJC = 2.3453e-13
+ VJC = 0.81969 MJC = 0.30232 XCJC = 0.3
+ TR = 2.3249e-09 CJS= 0 VJS = 0.75
+ MJS = 0 XTB = 0 EG = 1.11
+ XTI = 3 FC = 0.73234)
NF = 1.2432
* PNP: PL18 E B C Bulk
.SUBCKT 8PL18 3 2 1 94
Q1 993 2 3 94 TL18 8
Q2 94 2 3 94 VSL18 8
Q3 94 2 993 94 LSL18 8
RCEX 993 1 0.204
.ENDS
.SUBCKT 2PL18 3 2 1 94
Q1 993 2 3 94 TL18 2
Q2 94 2 3 94 VSL18 2
Q3 94 2 993 94 LSL18 2
RCEX 993 1 0.816
.ENDS
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| Q62702A1173 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching) |
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| Q62702A1178 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) |
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