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參數資料
| 型號： | Q62702-A1239 |
| 廠商： | SIEMENS AG |
| 英文描述： | CAP CER 680PF 250VAC X1Y2 RAD |
| 中文描述： | 硅開關二極管的初步數據（對于高速開關應用） |
| 文件頁數： | 3/11頁 |
| 文件大?。?/td> | 101K |
| 代理商： | Q62702-A1239 |
BGC420
High Frequency Products
3
Edition A13, 05/99
Power Gain
versus Frequency
Vcc=3V, Icc=5mA
Gma
Gms
￥
S21
￥
2
dB
f
GHz
Icc
mA
Gma
Gms
dB
Power Gain
versus Device Current
Vcc=3V
￥
S21
￥
2
S21
2
versus Frequency and Temperature
Vcc=3V, Icc=7mA
f
GHz
dB
=
-40°C
= +27
°C
= +85
°C
28
26
24
22
20
18
16
14
12
10
0.2 0.6 1 1.4 1.8 2.2 2.6 3
Gms
Gma
IS21I
2
50
45
40
35
30
25
20
15
10
5
0
0.1
1
10
f=1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
相關PDF資料 |
PDF描述 |
|---|---|
| Q62702-A1241 | INVERTER 12V-INPUT 1500V-OUTPUT |
| Q62702-A1243 | INVERTER 12V-INPUT 1250V-OUTPUT |
| Q62702-A1244 | PNP Silicon High-Voltage Transistor |
| Q62702-A1268 | Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A66 | Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-A1241 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Switching Diode Array (For high-speed switching applications Internal (galvanic) isolated Diodes in one package) |
| Q62702-A1243 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon High-Voltage Transistor |
| Q62702-A1244 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon High-Voltage Transistor |
| Q62702-A1253 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Switching Diode Array (For high-speed switching applications Common anode) |
| Q62702-A1261 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
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