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參數資料
型號: Q62702-A826
廠商: SIEMENS AG
英文描述: Silicon Schottky Diode
中文描述: 硅肖特基二極管
文件頁數: 1/11頁
文件大?。?/td> 101K
代理商: Q62702-A826
BGC420
High Frequency Products
1
Edition A13, 05/99
Type
Marking
Ordering Code
(8-mm taped)
Q62702-G0092
Pin Configuration
(circuit Diagram)
see below
Package
BGC420
42s
SCT598
Description
The BGC420 is a silicon self biased RF Transistor (Q1). It offers an adjustable collector current
nearly independent from device voltage in the range from 2.0V to 4.5V. Additionally a control pin
(Vc) for switching the device off is provided. The collector current can be adjusted by connecting a
resistor (Rx) between Vcc and Vr.
Self-Biased BFP420
l
SIEGET
25- Technology
l
Small SCT598-Package
l
Control Pin For Switching The Device Off
l
Current Easy Adjustable By An External Resistor
l
Voltage Independent Current (2V – 4.5V)
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe
handling precautions!
Equivalent Circuit
RFin
RFout
Q1
GND
Active
Bias
Circuit
Vb
Vc
Vcc
Vr
Pin Connections, SCT598
Vr,5
RFout,6
GND,7
Vc, 8
4,Vcc
3, Vb
2, GND
1,RFin
Note: Top View
VPW05982
7
5
2
3
1
4
6
8
相關PDF資料
PDF描述
Q62702-A829 Silicon RF Switching Diode
Q62702-A858 Silicon PIN Diode
Q62702-A859 Silicon PIN Diode
Q62702-A879 Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
Q62702-A911 Silicon Switching Diodes (Switching applications High breakdown voltage)
相關代理商/技術參數
參數描述
Q62702-A829 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon RF Switching Diode
Q62702-A858 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon PIN Diode
Q62702-A859 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon PIN Diode
Q62702-A879 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
Q62702-A910 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Switching Diodes (Switching applications High breakdown voltage)
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