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參數(shù)資料
| 型號： | Q62702-B628 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) |
| 中文描述： | 硅調(diào)諧二極管（Extented頻率高達(dá)2.5千兆赫;特別設(shè)計了一種用于電視使用稅務(wù)總局室內(nèi)單元） |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-B628 |
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-B63 | NPN SILICON EPIBASE TRANSISTORS |
| Q62702-B664 | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
| Q62702-B70 | Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
| Q62702-B802 | Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units) |
| Q62702-B824 | Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-B63 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON EPIBASE TRANSISTORS |
| Q62702-B631 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
| Q62702B634 | 制造商:INFINEON 功能描述:DIODE |
| Q62702B-634 | 制造商:INFINEON 功能描述:DIODE |
| Q62702-B663 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
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