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參數(shù)資料
| 型號(hào)： | Q62702-B63 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN SILICON EPIBASE TRANSISTORS |
| 中文描述： | NPN硅EPIBASE三極管 |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大小： | 101K |
| 代理商： | Q62702-B63 |
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-B631 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
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| Q62702B-634 | 制造商:INFINEON 功能描述:DIODE |
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| Q62702-B664 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
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