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參數(shù)資料
| 型號(hào)： | Q62702-C2125 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| 中文描述： | NPN硅晶體管自動(dòng)對(duì)焦（為自動(dòng)驅(qū)動(dòng)器和輸出級(jí)高集電極電流） |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 101K |
| 代理商： | Q62702-C2125 |
BGC420
High Frequency Products
1
Edition A13, 05/99
Type
Marking
Ordering Code
(8-mm taped)
Q62702-G0092
Pin Configuration
(circuit Diagram)
see below
Package
BGC420
42s
SCT598
Description
The BGC420 is a silicon self biased RF Transistor (Q1). It offers an adjustable collector current
nearly independent from device voltage in the range from 2.0V to 4.5V. Additionally a control pin
(Vc) for switching the device off is provided. The collector current can be adjusted by connecting a
resistor (Rx) between Vcc and Vr.
Self-Biased BFP420
l
SIEGET
25- Technology
l
Small SCT598-Package
l
Control Pin For Switching The Device Off
l
Current Easy Adjustable By An External Resistor
l
Voltage Independent Current (2V – 4.5V)
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe
handling precautions!
Equivalent Circuit
RFin
RFout
Q1
GND
Active
Bias
Circuit
Vb
Vc
Vcc
Vr
Pin Connections, SCT598
Vr,5
RFout,6
GND,7
Vc, 8
4,Vcc
3, Vb
2, GND
1,RFin
Note: Top View
VPW05982
7
5
2
3
1
4
6
8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-C2126 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 62pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |
| Q62702-C2127 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 62pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |
| Q62702-C2128 | NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
| Q62702-C2129 | NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
| Q62702-C2253 | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-C2126 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
| Q62702-C2127 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
| Q62702-C2128 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
| Q62702-C2129 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
| Q62702-C2130 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Transistor (For general AF application High collector current High current gain) |
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