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參數資料
| 型號： | Q62702-C327-V3 |
| 廠商： | SIEMENS AG |
| 英文描述： | PNP SILICON PLANAR TRANSISTORS |
| 中文描述： | 進步黨硅平面型晶體管 |
| 文件頁數： | 4/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-C327-V3 |
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
相關PDF資料 |
PDF描述 |
|---|---|
| Q62702-D1041 | Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |
| Q62702-D106-P | NPN SILICON TRANSISTORS |
| Q62702-F1238 | NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
| Q62702-F1239 | PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
| Q62702-F1271 | NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-C361-X1 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON TRANSISTOR |
| Q62702-C362 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON TRANSISTOR |
| Q62702-C452 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Transistors (For AF input stages and driver applications High current gain) |
| Q62702-C619 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
| Q62702-C620 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
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