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參數資料
| 型號： | Q62702-D111-P |
| 廠商： | SIEMENS AG |
| 英文描述： | PNP SILICON TRANSISTORS |
| 中文描述： | 進步黨硅晶體管 |
| 文件頁數： | 4/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-D111-P |
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
相關PDF資料 |
PDF描述 |
|---|---|
| Q62702-D111-V1 | PNP SILICON TRANSISTORS |
| Q62702-D111-V2 | PNP SILICON TRANSISTORS |
| Q62702-D160-V6 | PNP SILICON PLANAR TRANSISTORS |
| Q62702-A1160 | Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
| Q62702-A1161 | Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-D111-V1 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON TRANSISTORS |
| Q62702-D111-V2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON TRANSISTORS |
| Q62702-D1258 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
| Q62702-D1259 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
| Q62702-D1262 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) |
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