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參數資料
| 型號： | Q62702-D111-V1 |
| 廠商： | SIEMENS AG |
| 英文描述： | PNP SILICON TRANSISTORS |
| 中文描述： | 進步黨硅晶體管 |
| 文件頁數： | 3/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-D111-V1 |
BGC420
High Frequency Products
3
Edition A13, 05/99
Power Gain
versus Frequency
Vcc=3V, Icc=5mA
Gma
Gms
￥
S21
￥
2
dB
f
GHz
Icc
mA
Gma
Gms
dB
Power Gain
versus Device Current
Vcc=3V
￥
S21
￥
2
S21
2
versus Frequency and Temperature
Vcc=3V, Icc=7mA
f
GHz
dB
=
-40°C
= +27
°C
= +85
°C
28
26
24
22
20
18
16
14
12
10
0.2 0.6 1 1.4 1.8 2.2 2.6 3
Gms
Gma
IS21I
2
50
45
40
35
30
25
20
15
10
5
0
0.1
1
10
f=1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
相關PDF資料 |
PDF描述 |
|---|---|
| Q62702-D111-V2 | PNP SILICON TRANSISTORS |
| Q62702-D160-V6 | PNP SILICON PLANAR TRANSISTORS |
| Q62702-A1160 | Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
| Q62702-A1161 | Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
| Q62702-A1261 | Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-D111-V2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON TRANSISTORS |
| Q62702-D1258 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
| Q62702-D1259 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
| Q62702-D1262 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) |
| Q62702-D1263 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) |
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