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參數資料
型號: Q62702-D1281
廠商: SIEMENS AG
英文描述: Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
中文描述: 硅肖特基二極管(梁式引線技術低維高性能,低障礙)
文件頁數: 5/11頁
文件大小: 101K
代理商: Q62702-D1281
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
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相關代理商/技術參數
參數描述
Q62702-D1284 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier)
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Q62702-D1289 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
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