欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: Q62702-D284
廠商: SIEMENS AG
英文描述: NPN SILICON EPIBASE TRANSISTORS
中文描述: NPN硅EPIBASE三極管
文件頁數(shù): 2/11頁
文件大小: 101K
代理商: Q62702-D284
BGC420
High Frequency Products
2
Edition A13, 05/99
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, T
s
110°C
1)
Control voltage
Input Current for pin 1
Symbol
I
CC
Vcc
P
tot
Vc
Ir
Unit
mA
V
mW
V
μ
A
15
4.5
68
Vcc+0.5
380
Junction temperature
Ambient temperature range
Storage temperature range
T
j
T
A
T
stg
150
°
C
°
C
°
C
-65...+150
-65...+150
Thermal Resistance
Junction-soldering point
1)
1)TS is measured on the Ground lead at the soldering point to the pcb
.
R
th JS
270
K/W
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82
W
),
Tc=25°C, Vcc=3V, I
CC
7mA unless noted
Symbol
Gp
Parameter
Power Gain (
S
21
2
)
Unit
dB
Min
17.5
14.5
Typ
19
16
1.3
1.5
1
1
15
15
7
9
4
7
3.7
2.5
<10
35
-60
Max
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
NF
Noise Figure (in 50
W
System)
dB
1.5
1.7
P
-1dB
Output Power at 1dB Gain Compression f=900MHz
(in 50
W
System)
Third Order Intercept Point
(Output,
G
Opt
)
Input Return Loss
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
dBm
IP
3
dBm
RL
in
dB
RL
out
Output Return Loss
dB
t
on
t
off
I
leak
I
VcOn
I
VcOff
V
cmin
V
cmax
2)
A positive sign denotes a current flowing form the Pin into the external circuit.
On Switching Time
3)
Off Switching Time
3)
Leakage Current In Sleep Mode
Controll Pin (Vc) Current in Active Mode
2)
Controll Pin (Vc) Current in Sleep Mode
2)
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
μs
μs
μA
μA
nA
V
V
V
cc
- 0.3V
0V+0.3V
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
相關PDF資料
PDF描述
Q62702-D285 NPN SILICON EPIBASE TRANSISTORS
Q62702-D325 NPN SILICON EPIBASE TRANSISTORS
Q62702-D339 Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)
Q62702-D3429 Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
Q62702-D948 NPN SILICON EPIBASE TRANSISTORS
相關代理商/技術參數(shù)
參數(shù)描述
Q62702-D285 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON EPIBASE TRANSISTORS
Q62702-D325 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON EPIBASE TRANSISTORS
Q62702-D339 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)
Q62702-D3429 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
Q62702-D3431 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
主站蜘蛛池模板: 云霄县| 鄂州市| 边坝县| 深州市| 襄城县| 嘉峪关市| 密山市| 三河市| 兰州市| 区。| 彰化县| 射洪县| 竹山县| 平湖市| 页游| 双桥区| 泗阳县| 霍城县| 黄冈市| 黔西县| 桃源县| 府谷县| 遵化市| 寿宁县| 赤壁市| 林州市| 永德县| 玉树县| 磐石市| 木里| 天峻县| 涪陵区| 濮阳县| 和顺县| 拜城县| 田阳县| 通州市| 故城县| 南部县| 砀山县| 阿勒泰市|