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參數(shù)資料
| 型號(hào)： | Q62702-F1049 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications) |
| 中文描述： | NPN硅射頻晶體管（低噪聲放大器高達(dá)2GHz和寬帶應(yīng)用模擬和數(shù)字） |
| 文件頁(yè)數(shù)： | 10/11頁(yè) |
| 文件大小： | 101K |
| 代理商： | Q62702-F1049 |
BGC420
High Frequency Products
10
Edition A13, 05/99
Table 1. Parasitic circuit elements for frequencies above 100MHz
X3
X4
R1
X2
R2
R3
R4
Q1
Vc
Vb
GND
RFin
RFout
Vr
Vcc
C2
L1
C3
Rx
V
2
3
V
Lp1
Lp2
Cp1
Cp2
Lp5
Lp3
Lp4
Lp6
Cp3
Lp7
Figure 4. Parasitic circuit elements for frequencies above 100MHz
Element
Value
Lp1
Lp2
Lp3
Lp4
Lp5
Lp6
Lp7
Cp1
Cp2
Cp3
0.58nH
0.56nH
0.23nH
0.05nH
0.53nH
0.47nH
1nH
134fF
136fF
6.9fF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-F1050 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
| Q62702-F1051 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) |
| Q62702-F1052 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
| Q62702-F1053 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
| Q62702-F1055 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
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