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參數(shù)資料
型號(hào): Q62702-F1215
廠商: SIEMENS AG
英文描述: GaAs FET (N-channel dual-gate GaAs MES FET)
中文描述: 砷化鎵場(chǎng)效應(yīng)管(N溝道雙柵砷化鎵場(chǎng)效應(yīng)晶體管)
文件頁(yè)數(shù): 10/11頁(yè)
文件大小: 101K
代理商: Q62702-F1215
BGC420
High Frequency Products
10
Edition A13, 05/99
Table 1. Parasitic circuit elements for frequencies above 100MHz
X3
X4
R1
X2
R2
R3
R4
Q1
Vc
Vb
GND
RFin
RFout
Vr
Vcc
C2
L1
C3
Rx
V
2
3
V
Lp1
Lp2
Cp1
Cp2
Lp5
Lp3
Lp4
Lp6
Cp3
Lp7
Figure 4. Parasitic circuit elements for frequencies above 100MHz
Element
Value
Lp1
Lp2
Lp3
Lp4
Lp5
Lp6
Lp7
Cp1
Cp2
Cp3
0.58nH
0.56nH
0.23nH
0.05nH
0.53nH
0.47nH
1nH
134fF
136fF
6.9fF
相關(guān)PDF資料
PDF描述
Q62702-F1218 NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Q62702-F1219 NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers)
Q62702-F1222 NPN Silicon RF Transistor (For application in TV-sat tuners)
Q62702-F1225 NPN Silicon RF Transistor (For modulators and amplifiers in TV and VCR tuners)
Q62702-F1240 NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q62702-F1218 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Q62702-F1219 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers)
Q62702-F1222 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For application in TV-sat tuners)
Q62702-F1225 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For modulators and amplifiers in TV and VCR tuners)
Q62702-F1238 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
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