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參數資料
| 型號： | Q62702-F1271 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
| 中文描述： | NPN硅射頻晶體管（對于低噪聲，高增益的0.5毫安至12mA的集電極電流寬帶放大器） |
| 文件頁數： | 4/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F1271 |
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
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| Q62702-F1292 | NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) |
| Q62702-F1296 | NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
| Q62702-F1298 | NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-F1282 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
| Q62702-F1287 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
| Q62702-F1291 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
| Q62702-F1292 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) |
| Q62702-F1296 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
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