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參數資料
型號: Q62702-F1291
廠商: SIEMENS AG
英文描述: NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
中文描述: NPN硅射頻晶體管(對于低噪聲,高增益放大器,高達2GHz對于線性寬帶放大器)
文件頁數: 2/11頁
文件大小: 101K
代理商: Q62702-F1291
BGC420
High Frequency Products
2
Edition A13, 05/99
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, T
s
110°C
1)
Control voltage
Input Current for pin 1
Symbol
I
CC
Vcc
P
tot
Vc
Ir
Unit
mA
V
mW
V
μ
A
15
4.5
68
Vcc+0.5
380
Junction temperature
Ambient temperature range
Storage temperature range
T
j
T
A
T
stg
150
°
C
°
C
°
C
-65...+150
-65...+150
Thermal Resistance
Junction-soldering point
1)
1)TS is measured on the Ground lead at the soldering point to the pcb
.
R
th JS
270
K/W
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82
W
),
Tc=25°C, Vcc=3V, I
CC
7mA unless noted
Symbol
Gp
Parameter
Power Gain (
S
21
2
)
Unit
dB
Min
17.5
14.5
Typ
19
16
1.3
1.5
1
1
15
15
7
9
4
7
3.7
2.5
<10
35
-60
Max
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
NF
Noise Figure (in 50
W
System)
dB
1.5
1.7
P
-1dB
Output Power at 1dB Gain Compression f=900MHz
(in 50
W
System)
Third Order Intercept Point
(Output,
G
Opt
)
Input Return Loss
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
dBm
IP
3
dBm
RL
in
dB
RL
out
Output Return Loss
dB
t
on
t
off
I
leak
I
VcOn
I
VcOff
V
cmin
V
cmax
2)
A positive sign denotes a current flowing form the Pin into the external circuit.
On Switching Time
3)
Off Switching Time
3)
Leakage Current In Sleep Mode
Controll Pin (Vc) Current in Active Mode
2)
Controll Pin (Vc) Current in Sleep Mode
2)
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
μs
μs
μA
μA
nA
V
V
V
cc
- 0.3V
0V+0.3V
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
相關PDF資料
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Q62702-F1292 NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)
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Q62702-F1298 NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
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相關代理商/技術參數
參數描述
Q62702-F1292 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)
Q62702-F1296 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)
Q62702-F1298 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
Q62702-F1303 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
Q62702-F1304 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
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