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參數資料
| 型號： | Q62702-F1322 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) |
| 中文描述： | NPN硅射頻晶體管（低失真輸出天線的寬帶和電信放大級） |
| 文件頁數： | 4/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F1322 |
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
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| Q62702-F133 | NPN Silicon Planar Transistors |
| Q62702-F1488 | NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
| Q62702-F1489 | NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
| Q62702-F1491 | NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) |
| Q62702-F1492 | NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-F133 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Planar Transistors |
| Q62702-F134 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Planar Transistors |
| Q62702-F1346 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications) |
| Q62702-F1347 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents) |
| Q62702-F135 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Planar Transistors |
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