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參數資料
| 型號： | Q62702-F1372 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
| 中文描述： | 硅?溝道MOS FET三極管（對于RF階段高達300 MHz的FM應用的最好） |
| 文件頁數： | 5/11頁 |
| 文件大?。?/td> | 101K |
| 代理商： | Q62702-F1372 |
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
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相關代理商/技術參數 |
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| Q62702-F1377 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
| Q62702-F1378 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
| Q62702-F1382 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
| Q62702-F1391 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs MMIC (Biased Dual Gate GaAs FET) |
| Q62702-F1393 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
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