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參數資料
型號: Q62702-F1549
廠商: SIEMENS AG
英文描述: AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
中文描述: 的AlGaAs /銦鎵砷遷移率晶體管(非常非常低噪聲高增益低噪聲放大器的前端高達20 GHz的星展下變頻器)
文件頁數: 11/11頁
文件大小: 101K
代理商: Q62702-F1549
BGC420
High Frequency Products
11
Edition A13, 05/99
Package
Published by
Infineon Technologies AG i Gr.,
Bereichs Kommunikation
St.-Martin-Strasse 76,
D-81541 München
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change
reserved.
We hereby disclaim any and all warranties, including
but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated
herein.
Infineon Technologies is an approved CECC
manufacturer.
Information
For further information on technology, delivery terms
and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or
our Infineon Technologies Representatives
worldwide (see address list).
Warnings
Due to technical requirements components may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be
used in life-support devices or systems with the
express written approval of Infineon Technologies, if
a failure of such components can reasonably be
expected to cause the failure of that life-support
device or system, or to affect the safety or
effectiveness of that device or system. Life support
devices or systems are intended to be implanted in
the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or
other persons may be endangered.
.
相關PDF資料
PDF描述
Q62702-F1613 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
Q62702-F1627 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Q62702-F1628 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
Q62702-F1645 NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)
Q62702-F1665 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
相關代理商/技術參數
參數描述
Q62702-F1559 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
Q62702-F1568 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon RF Transistor (For VHF oscillator applications)
Q62702F1571 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR R.F SOT323
Q62702-F1571 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For linear broadband amplifier applications up to 500MHz SAW filter driver in TV tuners)
Q62702F1572 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR R.F SOT363
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