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參數資料
型號: Q62702-F1594
廠商: SIEMENS AG
英文描述: NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)
中文描述: NPN硅射頻晶體管(對于低噪聲,高增益的2毫安至28 mA的集電極電流寬帶放大器)
文件頁數: 1/11頁
文件大小: 101K
代理商: Q62702-F1594
BGC420
High Frequency Products
1
Edition A13, 05/99
Type
Marking
Ordering Code
(8-mm taped)
Q62702-G0092
Pin Configuration
(circuit Diagram)
see below
Package
BGC420
42s
SCT598
Description
The BGC420 is a silicon self biased RF Transistor (Q1). It offers an adjustable collector current
nearly independent from device voltage in the range from 2.0V to 4.5V. Additionally a control pin
(Vc) for switching the device off is provided. The collector current can be adjusted by connecting a
resistor (Rx) between Vcc and Vr.
Self-Biased BFP420
l
SIEGET
25- Technology
l
Small SCT598-Package
l
Control Pin For Switching The Device Off
l
Current Easy Adjustable By An External Resistor
l
Voltage Independent Current (2V – 4.5V)
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe
handling precautions!
Equivalent Circuit
RFin
RFout
Q1
GND
Active
Bias
Circuit
Vb
Vc
Vcc
Vr
Pin Connections, SCT598
Vr,5
RFout,6
GND,7
Vc, 8
4,Vcc
3, Vb
2, GND
1,RFin
Note: Top View
VPW05982
7
5
2
3
1
4
6
8
相關PDF資料
PDF描述
Q62702-F1601 NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
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相關代理商/技術參數
參數描述
Q62702-F1601 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
Q62702F1611 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR R.F SOT143
Q62702-F1611 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.)
Q62702-F1613 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode
Q62702-F1627 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
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