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參數資料
| 型號： | Q62702-F1627 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
| 中文描述： | 硅N溝道MOSFET四極管（低噪聲，高增益控制輸入級高達1GHz工作電壓5V的穩定偏置網絡集成） |
| 文件頁數： | 6/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F1627 |
BGC420
High Frequency Products
6
Edition A13, 05/99
Layout Proposal
Part List for Vcc=3V, I
CC
￡
7mA
Component
Value
Comment
L1
C2
C3
C4
C5
C6
C7
Rx
Substrate
BGC420
100nH
RFC
1nF
Compensation Capacitor for Low Frequency Stabilization
100pF
RFC
150pF
Blocking Capacitor
100nF
Blocking Capacitor
220pF
Coupling Capacitor
220pF
Coupling Capacitor
82
W
h=0.5mm
Current Adjust
Fr4,
e
r
=4.5
This proposal demonstrates how to use the BGC420 as a Self-Biased Transistor. As for a discrete Transistor
matching circuits have to be applied. A good starting point for various applications are the Application Notes
provided for the BFP420.
LQ
C7
9F
9
%*&
C2
C4
C5
Rx
L1
C3
C6
B
Figure 2. Layout Proposal
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| Q62702-F1628 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
| Q62702-F1645 | NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
| Q62702-F1665 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
| Q62702-F1681 | PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA) |
| Q62702-F1685 | NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-F1628 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
| Q62702-F1645 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
| Q62702F1656 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR R.F SOT363 |
| Q62702-F1665 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
| Q62702F1681 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR R.F SOT323 |
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