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參數資料
| 型號： | Q62702-F1645 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
| 中文描述： | NPN硅射頻晶體管（對于寬帶放大器的集電極電流高達1GHz的由1mA至20mA） |
| 文件頁數： | 4/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F1645 |
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
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| Q62702-F1665 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
| Q62702-F1681 | PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA) |
| Q62702-F1685 | NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
| Q62702-F1771 | Silicon N Channel MOSFET Tetrode |
| Q62702-F1772 | Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702F1656 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR R.F SOT363 |
| Q62702-F1665 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
| Q62702F1681 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR R.F SOT323 |
| Q62702-F1681 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA) |
| Q62702-F1685 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
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