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參數資料
| 型號： | Q62702-F1685 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
| 中文描述： | NPN硅射頻晶體管（對于低噪聲，高增益的0.5毫安至12mA的集電極電流寬帶放大器） |
| 文件頁數： | 5/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F1685 |
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
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