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參數資料
| 型號： | Q62702-F1774 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
| 中文描述： | 硅N溝道MOSFET四極管（低噪聲，高增益控制輸入級高達1GHz工作電壓5V） |
| 文件頁數： | 4/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F1774 |
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
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| Q62702-F1775 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
| Q62702-F1776 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
| Q62702-F182 | N-Channel junction field-Effect Transistors |
| Q62702-F205 | N-Channel junction field-Effect Transistors |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-F1775 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
| Q62702-F1776 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
| Q62702-F1794 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
| Q62702-F182 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:N-Channel junction field-Effect Transistors |
| Q62702-F201 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transisrors |
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