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參數資料
| 型號： | Q62702-F349 |
| 廠商： | SIEMENS AG |
| 英文描述： | npn silicon rf transistor |
| 中文描述： | NPN硅射頻晶體管 |
| 文件頁數： | 7/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F349 |
BGC420
High Frequency Products
7
Edition A13, 05/99
SPICE Model
The following SPICE Listing describes the circuit shown in figure 3. It is valid for low frequencies. For
frequencies above 100MHz the parasitic circuit elements noted in figure 4 and table 1 should be added.
* Preliminary SPICE Model for BGC420 (valid for frequencies below 100MHz)
* SIEMENS HIGH FREQUENCY PRODUCTS
* Small Scale MMIC Design Group
.PARAM R=82
** Analysis setup **
*.TRAN 2ns 15u 0 2n
.TEMP +27
.DC LIN V1 0V 4V 0.1V
*.DC LIN V2 0V 3V 0.1V
.STEP PARAM R LIST 56 82 120 680
* Voltage supply
V1
Vcc 0
V2
Vc 0
*Vpul Vc 0
DC 3.0V
DC 0.0V
PULSE(0 3V 100ns 0 0 9us 1000m)
X3
X4
R1
X2
R2
R3
R4
Q1
Vc,4
Vb
GND
RFin
RFout
Vr
Vcc
C2
L1
C3
Rx
V
vin
2
C6
Rin
C7
3
V
Rout
Figure. 3: Circuit used in the SPICE File
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| Q62702-F35 | SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
| Q62702-F354 | NPN Silicon RF Transistor |
| Q62702-F365 | NPN SILICON RF BROADBAND TRANSISTOR |
| Q62702-F395 | NPN SILICON RF TRANSISTORS |
| Q62702-F396 | NPN SILICON RF TRANSISTORS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-F35 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
| Q62702-F350 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON RF TRANSISTOR |
| Q62702-F354 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor |
| Q62702-F365 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON RF BROADBAND TRANSISTOR |
| Q62702-F390 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON RF BROADBAND TRANSISTOR |
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