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參數資料
| 型號： | Q62702-F622 |
| 廠商： | SIEMENS AG |
| 英文描述： | PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
| 中文描述： | 進步黨硅晶體管（高擊穿電壓低集電極發射極飽和電壓） |
| 文件頁數： | 3/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F622 |
BGC420
High Frequency Products
3
Edition A13, 05/99
Power Gain
versus Frequency
Vcc=3V, Icc=5mA
Gma
Gms
￥
S21
￥
2
dB
f
GHz
Icc
mA
Gma
Gms
dB
Power Gain
versus Device Current
Vcc=3V
￥
S21
￥
2
S21
2
versus Frequency and Temperature
Vcc=3V, Icc=7mA
f
GHz
dB
=
-40°C
= +27
°C
= +85
°C
28
26
24
22
20
18
16
14
12
10
0.2 0.6 1 1.4 1.8 2.2 2.6 3
Gms
Gma
IS21I
2
50
45
40
35
30
25
20
15
10
5
0
0.1
1
10
f=1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
相關PDF資料 |
PDF描述 |
|---|---|
| Q62702-F626 | PNP SILICON PLANAR TRANSISTOR |
| Q62702-F640 | NPN Silicon RF Transistor (For SAW filter driver applications in TV tuners For linear broadband VHF amplifier stages) |
| Q62702-F65 | PNP SILICON PLANAR TRANSISTORS |
| Q62702-F655 | LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz |
| Q62702-F659 | NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-F626 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTOR |
| Q62702-F640 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For SAW filter driver applications in TV tuners For linear broadband VHF amplifier stages) |
| Q62702-F65 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTORS |
| Q62702-F655 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz |
| Q62702-F659 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
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