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參數(shù)資料
| 型號： | Q62702-F704 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon Switching Diode (For high-speed switching) |
| 中文描述： | 硅開關(guān)二極管（對于高速開關(guān)） |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F704 |
BGC420
High Frequency Products
1
Edition A13, 05/99
Type
Marking
Ordering Code
(8-mm taped)
Q62702-G0092
Pin Configuration
(circuit Diagram)
see below
Package
BGC420
42s
SCT598
Description
The BGC420 is a silicon self biased RF Transistor (Q1). It offers an adjustable collector current
nearly independent from device voltage in the range from 2.0V to 4.5V. Additionally a control pin
(Vc) for switching the device off is provided. The collector current can be adjusted by connecting a
resistor (Rx) between Vcc and Vr.
Self-Biased BFP420
l
SIEGET
25- Technology
l
Small SCT598-Package
l
Control Pin For Switching The Device Off
l
Current Easy Adjustable By An External Resistor
l
Voltage Independent Current (2V – 4.5V)
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe
handling precautions!
Equivalent Circuit
RFin
RFout
Q1
GND
Active
Bias
Circuit
Vb
Vc
Vcc
Vr
Pin Connections, SCT598
Vr,5
RFout,6
GND,7
Vc, 8
4,Vcc
3, Vb
2, GND
1,RFin
Note: Top View
VPW05982
7
5
2
3
1
4
6
8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-F721 | NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) |
| Q62702-F722 | PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
| Q62702-F739 | Silicon Switching Diode (For high-speed switching) |
| Q62702-F774 | NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) |
| Q62702-F775 | NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-F721 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) |
| Q62702-F722 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
| Q62702-F739 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Switching Diode (For high-speed switching) |
| Q62702-F774 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) |
| Q62702-F775 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.) |
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