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參數資料
型號: Q62702-L94
廠商: SIEMENS AG
英文描述: GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)
中文描述: 砷化鎵場效應管(功率放大器,對于從400兆赫到2.5千兆赫頻率的移動電話)
文件頁數: 1/11頁
文件大?。?/td> 101K
代理商: Q62702-L94
BGC420
High Frequency Products
1
Edition A13, 05/99
Type
Marking
Ordering Code
(8-mm taped)
Q62702-G0092
Pin Configuration
(circuit Diagram)
see below
Package
BGC420
42s
SCT598
Description
The BGC420 is a silicon self biased RF Transistor (Q1). It offers an adjustable collector current
nearly independent from device voltage in the range from 2.0V to 4.5V. Additionally a control pin
(Vc) for switching the device off is provided. The collector current can be adjusted by connecting a
resistor (Rx) between Vcc and Vr.
Self-Biased BFP420
l
SIEGET
25- Technology
l
Small SCT598-Package
l
Control Pin For Switching The Device Off
l
Current Easy Adjustable By An External Resistor
l
Voltage Independent Current (2V – 4.5V)
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe
handling precautions!
Equivalent Circuit
RFin
RFout
Q1
GND
Active
Bias
Circuit
Vb
Vc
Vcc
Vr
Pin Connections, SCT598
Vr,5
RFout,6
GND,7
Vc, 8
4,Vcc
3, Vb
2, GND
1,RFin
Note: Top View
VPW05982
7
5
2
3
1
4
6
8
相關PDF資料
PDF描述
Q62702-L96 GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz)
Q62702-L99 GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)
Q62702-M9 GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication)
Q62702-P174 NPN-Silizium-Fototransistor Silicon NPN Phototransistor
Q62702-P1751 .Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor
相關代理商/技術參數
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