- 您現在的位置：買賣IC網 > PDF目錄361193 > Q62702-P1634 (SIEMENS AG) SMT Multi TOPLED PDF資料下載
參數資料
| 型號： | Q62702-P1634 |
| 廠商： | SIEMENS AG |
| 英文描述： | SMT Multi TOPLED |
| 中文描述： | 貼片多TOPLED |
| 文件頁數： | 2/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-P1634 |
BGC420
High Frequency Products
2
Edition A13, 05/99
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, T
s
≤
110°C
1)
Control voltage
Input Current for pin 1
Symbol
I
CC
Vcc
P
tot
Vc
Ir
Unit
mA
V
mW
V
μ
A
15
4.5
68
Vcc+0.5
380
Junction temperature
Ambient temperature range
Storage temperature range
T
j
T
A
T
stg
150
°
C
°
C
°
C
-65...+150
-65...+150
Thermal Resistance
Junction-soldering point
1)
1)TS is measured on the Ground lead at the soldering point to the pcb
.
R
th JS
≤
270
K/W
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82
W
),
Tc=25°C, Vcc=3V, I
CC
￡
7mA unless noted
Symbol
Gp
Parameter
Power Gain (
￥
S
21
￥
2
)
Unit
dB
Min
17.5
14.5
Typ
19
16
1.3
1.5
1
1
15
15
7
9
4
7
3.7
2.5
<10
35
-60
Max
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
NF
Noise Figure (in 50
W
System)
dB
1.5
1.7
P
-1dB
Output Power at 1dB Gain Compression f=900MHz
(in 50
W
System)
Third Order Intercept Point
(Output,
G
Opt
)
Input Return Loss
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
dBm
IP
3
dBm
RL
in
dB
RL
out
Output Return Loss
dB
t
on
t
off
I
leak
I
VcOn
I
VcOff
V
cmin
V
cmax
2)
A positive sign denotes a current flowing form the Pin into the external circuit.
On Switching Time
3)
Off Switching Time
3)
Leakage Current In Sleep Mode
Controll Pin (Vc) Current in Active Mode
2)
Controll Pin (Vc) Current in Sleep Mode
2)
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
μs
μs
μA
μA
nA
V
V
V
cc
- 0.3V
0V+0.3V
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
相關PDF資料 |
PDF描述 |
|---|---|
| Q62702-P1638 | NPN-Silizium-Fototransistor im SMT SIDELEDa-Gehause Silicon NPN Phototransistor in SMT SIDELEDa-Package |
| Q62702-P1639 | NPN-Silizium-Fototransistor im SMT SIDELEDa-Gehause Silicon NPN Phototransistor in SMT SIDELEDa-Package |
| Q62702-P1641 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q62702-P1646 | Silizium-PIN-Fotodiode mit Tageslichtsperrfilter |
| Q62702-P1654 | Unmounted Laser Bars 20 W cw ... 100 W qcw |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702P1646 | 制造商:OSRAM 功能描述:PHOTODIODE 950NM W/FILTER SMD |
| Q62702P1666 | 制造商:OSRAM 功能描述:PHOTODIODE, BLACK PLASTIC PIN T&R - Tape and Reel |
| Q62702P1668 | 制造商:OSRAM 功能描述:Phototransistor Chip Silicon 850nm 2-Pin T-1 3/4 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 850NM 2PIN T-1 3 - Bulk 制造商:OSRAM 功能描述:PHOTOTRANSISTOR NPN 850NM CLEAR |
| Q62702P1671 | 功能描述:光電二極管 RoHS:否 制造商:Vishay Semiconductors 產品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強度角度:50 deg 封裝 / 箱體:TO-5 |
| Q62702P1673 | 制造商:OSRAM 功能描述:PHOTOTRANSISTOR IR CHIP SILICON NPN TRANSISTOR 890NM 2PIN T- - Bulk 制造商:OSRAM 功能描述:PHOTOTRANSISTOR NPN 3MM 890NM |
發布緊急采購，3分鐘左右您將得到回復。