- 您現在的位置：買賣IC網 > PDF目錄361198 > Q62702-S534 (SIEMENS AG) PNP Silicon AF and Switching Transistors (For general AF applications High breakdown voltage) PDF資料下載
參數資料
| 型號： | Q62702-S534 |
| 廠商： | SIEMENS AG |
| 英文描述： | PNP Silicon AF and Switching Transistors (For general AF applications High breakdown voltage) |
| 中文描述： | 進步黨硅自動對焦和開關晶體管（一般自動對焦應用高擊穿電壓） |
| 文件頁數： | 2/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-S534 |
BGC420
High Frequency Products
2
Edition A13, 05/99
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, T
s
≤
110°C
1)
Control voltage
Input Current for pin 1
Symbol
I
CC
Vcc
P
tot
Vc
Ir
Unit
mA
V
mW
V
μ
A
15
4.5
68
Vcc+0.5
380
Junction temperature
Ambient temperature range
Storage temperature range
T
j
T
A
T
stg
150
°
C
°
C
°
C
-65...+150
-65...+150
Thermal Resistance
Junction-soldering point
1)
1)TS is measured on the Ground lead at the soldering point to the pcb
.
R
th JS
≤
270
K/W
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82
W
),
Tc=25°C, Vcc=3V, I
CC
￡
7mA unless noted
Symbol
Gp
Parameter
Power Gain (
￥
S
21
￥
2
)
Unit
dB
Min
17.5
14.5
Typ
19
16
1.3
1.5
1
1
15
15
7
9
4
7
3.7
2.5
<10
35
-60
Max
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
NF
Noise Figure (in 50
W
System)
dB
1.5
1.7
P
-1dB
Output Power at 1dB Gain Compression f=900MHz
(in 50
W
System)
Third Order Intercept Point
(Output,
G
Opt
)
Input Return Loss
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
dBm
IP
3
dBm
RL
in
dB
RL
out
Output Return Loss
dB
t
on
t
off
I
leak
I
VcOn
I
VcOff
V
cmin
V
cmax
2)
A positive sign denotes a current flowing form the Pin into the external circuit.
On Switching Time
3)
Off Switching Time
3)
Leakage Current In Sleep Mode
Controll Pin (Vc) Current in Active Mode
2)
Controll Pin (Vc) Current in Sleep Mode
2)
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
μs
μs
μA
μA
nA
V
V
V
cc
- 0.3V
0V+0.3V
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
相關PDF資料 |
PDF描述 |
|---|---|
| Q62702-S535 | NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) |
| Q62702-S555 | NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
| Q62702-S557 | PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
| Q62702-C1850 | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
| Q62702-C1851 | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-Y147 | 制造商:GILB 功能描述: |
| Q62703Q0070 | 制造商:OSRAM 功能描述:LED IRLED 950NM 6PIN - Bulk 制造商:OSRAM 功能描述:EMITTER IR ARRAY 950NM MINI TH |
| Q62703Q0071 | 制造商:OSRAM 功能描述:LED IrLED 950nm 6-Pin 制造商:OSRAM 功能描述:GAAS INFRARED EMITTING DIODE ARRAYS 制造商:OSRAM 功能描述:LED IRLED 950NM 6PIN - Bulk 制造商:OSRAM 功能描述:EMITTER IR ARRAY 950NM MINI TH 制造商:OSRAM Opto Semiconductors 功能描述:LED IrLED 950nm 6-Pin 制造商:OSRAM Opto Semiconductors 功能描述:GAAS INFRARED EMITTING DIODE ARRAYS |
| Q62703Q0072 | 制造商:OSRAM 功能描述:GAAS INFRARED EMITTING DIODE ARRAYS 制造商:OSRAM 功能描述:LED IRLED 950NM 6PIN - Bulk 制造商:OSRAM 功能描述:EMITTER ARRAY MINI GAAS 950NM |
| Q62703Q0073 | 制造商:OSRAM 功能描述:GAAS INFRARED EMITTING DIODE ARRAYS 制造商:OSRAM 功能描述:LED IRLED 950NM 6PIN - Bulk 制造商:OSRAM 功能描述:EMITTER IR ARRAY 950NM MINI TH |
發布緊急采購，3分鐘左右您將得到回復。