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參數(shù)資料
型號: Q62702-S535
廠商: SIEMENS AG
英文描述: NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage)
中文描述: NPN硅自動對焦和開關(guān)晶體管(高擊穿電壓低集電極發(fā)射極飽和電壓)
文件頁數(shù): 6/11頁
文件大小: 101K
代理商: Q62702-S535
BGC420
High Frequency Products
6
Edition A13, 05/99
Layout Proposal
Part List for Vcc=3V, I
CC
7mA
Component
Value
Comment
L1
C2
C3
C4
C5
C6
C7
Rx
Substrate
BGC420
100nH
RFC
1nF
Compensation Capacitor for Low Frequency Stabilization
100pF
RFC
150pF
Blocking Capacitor
100nF
Blocking Capacitor
220pF
Coupling Capacitor
220pF
Coupling Capacitor
82
W
h=0.5mm
Current Adjust
Fr4,
e
r
=4.5
This proposal demonstrates how to use the BGC420 as a Self-Biased Transistor. As for a discrete Transistor
matching circuits have to be applied. A good starting point for various applications are the Application Notes
provided for the BFP420.
LQ
C7
9F
9
%*&
C2
C4
C5
Rx
L1
C3
C6
B
Figure 2. Layout Proposal
相關(guān)PDF資料
PDF描述
Q62702-S555 NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)
Q62702-S557 PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)
Q62702-C1850 PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
Q62702-C1851 PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
Q62702-C1852 PNP Silicon Darlington Transistors (For general AF applications High collector current)
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