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參數資料
型號: Q67006-A8369-A703
廠商: SIEMENS AG
英文描述: ZENER - 5.1V, 5%, 1W, AXIAL
中文描述: 功率因數控制器功率因數校正集成電路高功率因數,有源諧波濾波器
文件頁數: 3/17頁
文件大小: 194K
代理商: Q67006-A8369-A703
TDA 4862
Semiconductor Group
3
1998-02-16
Pin Definitions and Functions
Pin Symbol Function
1
V
SENSE
Voltage Amplifier Inverting Input;
V
SENSE
is connected via a resistive divider to the boost converter output.
With a capacitor connected to
V
AOUT
it forms an integrator.
Voltage Amplifier Output;
V
AOUT
is connected internally to the first multiplier input. To prevent
overshoot the input voltage will be clamped at 5 V. Input voltage less
than 2.2 V is inhibiting the gate driver. If the current flowing into this pin
is exceeding an internal defined margin the multiplier output voltage is
reduced to prevent the MOSFET from overvoltage damage.
MULTIN
Multiplier Input;
MULTIN is the second multiplier input and connected via a resistive
divider to the rectifier output voltage.
I
SENSE
Current Sense Minus;
I
SENSE
is connected to a sense resistor controlling the MOSFET source
current. The input is internally clamped at – 0.3 V to prevent negative
input voltage interaction. An internal low pass filter suppresses voltage
spikes when turning the MOSFET on.
DETIN
Zero Current Detector Input;
DETIN is connected to an auxiliary winding monitoring the zero crossing
of the inductor current.
GND
Ground;
All voltages are measured with respect to GND.
V
CC
should be
bypassed directly to GND with a 0.1
μ
F or larger ceramic capacitor.
GTDRV
Gate Drive Output;
GTDRV is the output of a totem-pole circuitry for direct driving a
MOSFET. A clamping network bypasses low state source current and
high state sink current.
V
CC
Positive Supply Voltage;
V
CC
should be connected to a stable source slightly above the
V
CC
turn-ON threshold for normal operation. A 100 nF or lager ceramic
capacitor connected to
V
CC
absorbs supply current spikes required to
charge external MOSFET gate capacitances.
2
V
AOUT
3
4
5
6
7
8
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