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參數資料
| 型號： | Q67007-A5211 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Wireless Components |
| 中文描述： | 無線組件 |
| 文件頁數： | 10/16頁 |
| 文件大小： | 284K |
| 代理商： | Q67007-A5211 |
BTS 7741 G
Data Sheet
10
2003-03-06
Output stages
Inverse diode of high-side
switch; Forward-voltage
Inverse diode of low-side
switch; Forward-voltage
Static drain-source
on-resistance of high-side
switch
Static drain-source
on-resistance of low-side
switch
Static path on-resistance
V
FH
–
0.8
1.2
V
I
FH
= 3 A
V
FL
–
0.8
1.2
V
I
FL
= 3 A
R
DS ON H
–
110
140
m
I
SH
= 1 A
T
j
= 25
°
C
R
DS ON L
–
100
120
m
I
SL
= 1 A;
V
GL
= 5 V
T
j
= 25
°
C
R
DS ON H
+ R
DS ON L
I
SH
= 1 A;
R
DS ON
–
–
500
m
Short Circuit of high-side switch to GND
Initial peak SC current
I
SCP H
9
8
6
11
10
8
14
13
10
A
A
A
T
j
= – 40 °C
T
j
= + 25 °C
T
j
= + 150 °C
Short Circuit of high-side switch to
V
S
Output pull-down-resistor
R
O
12
22
50
k
V
DSL
= 3 V
Short Circuit of low-side switch to
V
S
Initial peak SC current
I
SCP L
14
12
17
15
22
20
A
A
T
j
= – 40
°
C
T
j
= 25
°
C
T
j
= 150
°
C
8.5
10
15
A
Note:
Integrated protection functions are designed to prevent IC destruction under fault conditions. Protection
functions are not designed for continuous or repetitive operation.
3.3
I
SH1
=
I
SH2
=
I
SL1
=
I
SL2
= 0 A; – 40
°
C <
T
j
< 150
°
C; 8 V <
V
S
< 18 V
unless otherwise specified
Electrical Characteristics
(cont’d)
Parameter
Symbol
Limit Values
min.
typ.
Unit
Test Condition
max.
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