欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: Q67040-S4351
廠商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS Power Transistor
中文描述: 酷MOS功率晶體管
文件頁數: 7/13頁
文件大小: 402K
代理商: Q67040-S4351
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
7
Rev. 2.2 Dec-04
E
,
S
0A
20A
40A
60A
80A
0.0mJ
2.0mJ
4.0mJ
6.0mJ
8.0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
0
10
20
0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
5.0mJ
6.0mJ
E
ts
*
E
off
*)
E
on
and
E
ts
include losses
due to diode recovery
E
on
*
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 7
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 50A,
Dynamic test circuit in Figure E)
E
,
S
25°C
50°C
75°C
100°C
125°C
150°C
0.0mJ
1.0mJ
2.0mJ
3.0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
300V
350V
400V
450V
500V
550V
0mJ
1mJ
2mJ
3mJ
4mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 50A,
R
G
= 7
,
Dynamic test circuit in Figure E)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 50A,
R
G
= 7
,
Dynamic test circuit in Figure E)
相關PDF資料
PDF描述
Q67040-S4520 LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE
Q67040-A4451 Boost Controller
Q67040-S4452 Boost Controller
Q67040-S4504 FAST IGBT IN NPT TECHNOLOGY
Q67040-S4505 FAST IGBT IN NPT TECHNOLOGY
相關代理商/技術參數
參數描述
Q67040-S4352 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS? Power Transistor
Q67040-S4368 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Carbide Schottky Diode
Q67040-S4369 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Carbide Schottky Diode
Q67040-S4372 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Carbide Schottky Diode
Q67040-S4373 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Carbide Schottky Diode
主站蜘蛛池模板: 蓝田县| 大安市| 额尔古纳市| 泊头市| 榆树市| 溆浦县| 长泰县| 齐齐哈尔市| 金平| 永登县| 仪陇县| 安化县| 大同市| 怀化市| 斗六市| 微山县| 合作市| 苍南县| 江油市| 碌曲县| 房产| 乐昌市| 凤庆县| 白沙| 颍上县| 渝中区| 图木舒克市| 聂拉木县| 库尔勒市| 霍林郭勒市| 霞浦县| 永嘉县| 东丰县| 沧州市| 裕民县| 安化县| 宝应县| 古浪县| 孝昌县| 樟树市| 兰州市|