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參數資料
| 型號： | Q67040-S4505 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | FAST IGBT IN NPT TECHNOLOGY |
| 中文描述： | 快速IGBT技術在不擴散核武器條約 |
| 文件頁數： | 8/13頁 |
| 文件大小： | 402K |
| 代理商： | Q67040-S4505 |
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
8
Rev. 2.2 Dec-04
V
G
,
G
-
E
0nC
100nC
200nC
300nC
0V
5V
10V
15V
480V
120V
c
C
0V
10V
20V
30V
40V
100pF
1nF
C
rss
C
oss
C
iss
Q
GE
,
GATE CHARGE
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(
V
GE
=0V,
f
= 1 MHz)
Figure 17. Typical gate charge
(
I
C
=50 A)
I
C
,
C
12V
14V
16V
18V
0A
100A
200A
300A
400A
500A
600A
700A
800A
t
S
,
S
10V
11V
12V
13V
14V
0μs
2μs
4μs
6μs
8μs
10μs
12μs
V
GE
,
GATE
-
EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(
V
CE
≤
400V,
T
j
≤
150
°
C)
V
GE
,
GATE
-
EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(
V
CE
=600V
,
start at
T
J
=
25°C,
T
Jmax
<150°C)
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| Q67040-S4275 | Fast IGBT in NPT-technology |
| Q67040-S4276 | Fast IGBT in NPT-technology |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| Q67040-S4511 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Carbide Schottky Diode |
| Q67040-S4514 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LOW LOSS DUOPACK - IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI - PARALLEL EMCON HE DIODE |
| Q67040-S4516 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE |
| Q67040-S4518 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:TRENCHSTOP SERIES |
| Q67040-S4519 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss IGBT in Trench and Fieldstop technology |
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