- 您現在的位置：買賣IC網 > PDF目錄361229 > Q67040-S4610 (INFINEON TECHNOLOGIES AG) High Speed CMOS Logic Hex Non-Inverting Buffers 16-SO -55 to 125 PDF資料下載
參數資料
| 型號： | Q67040-S4610 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | High Speed CMOS Logic Hex Non-Inverting Buffers 16-SO -55 to 125 |
| 中文描述： | 離線式開關電源電流模式控制器，集成了?650V / 800V的的CoolMOS |
| 文件頁數： | 7/13頁 |
| 文件大小： | 402K |
| 代理商： | Q67040-S4610 |
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
7
Rev. 2.2 Dec-04
E
,
S
0A
20A
40A
60A
80A
0.0mJ
2.0mJ
4.0mJ
6.0mJ
8.0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
0
10
20
0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
5.0mJ
6.0mJ
E
ts
*
E
off
*)
E
on
and
E
ts
include losses
due to diode recovery
E
on
*
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 7
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 50A,
Dynamic test circuit in Figure E)
E
,
S
25°C
50°C
75°C
100°C
125°C
150°C
0.0mJ
1.0mJ
2.0mJ
3.0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
300V
350V
400V
450V
500V
550V
0mJ
1mJ
2mJ
3mJ
4mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 50A,
R
G
= 7
,
Dynamic test circuit in Figure E)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 50A,
R
G
= 7
,
Dynamic test circuit in Figure E)
相關PDF資料 |
PDF描述 |
|---|---|
| Q67040-S4625 | High Speed CMOS Logic Hex Non-Inverting Buffers 16-SO -55 to 125 |
| Q67040-S4626 | High Speed CMOS Logic Hex Non-Inverting Buffers 16-SO -55 to 125 |
| Q67040-S4377 | Fast Switching EmCon Diode |
| Q67040-S4381 | Fast Switching EmCon Diode |
| Q67040-S4650 | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q67040-S4620 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Power Factor Controller IC for High Power Factor and Low THD |
| Q67040-S4621 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Power Factor Controller IC for High Power Factor and Low THD |
| Q67040-S4625 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LightMOS Power Transistor |
| Q67040-S4626 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LightMOS Power Transistor |
| Q67040-S4627 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LightMOS Power Transistor |
發布緊急采購，3分鐘左右您將得到回復。