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參數資料
| 型號： | Q67040-S4650 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| 中文描述： | 低損耗DuoPack：在IGBT的溝槽場終止技術和軟，恢復快反平行何快恢復二極管 |
| 文件頁數： | 6/13頁 |
| 文件大小： | 402K |
| 代理商： | Q67040-S4650 |
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
6
Rev. 2.2 Dec-04
t
S
0A
20A
40A
60A
80A
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t
S
0
5
10
15
20
25
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
J
=175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 7
,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 50A,
Dynamic test circuit in Figure E)
t
S
25°C
50°C
75°C
100°C 125°C 150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
V
G
)
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
T
J
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 50A,
R
G
=7
,
Dynamic test circuit in Figure E)
T
J
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(
I
C
= 0.8mA)
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| Q67040S4717 | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
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| Q67040-S4493 | Fast Switching EmCon Diode |
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|---|---|
| Q67040-S4654 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HighSpeed 2-Technology |
| Q67040-S4655 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode |
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