- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361229 > Q67040S4722 (INFINEON TECHNOLOGIES AG) LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY PDF資料下載
參數(shù)資料
| 型號(hào)： | Q67040S4722 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY |
| 中文描述： | 低損耗IGBT的在戰(zhàn)壕和FILEDSTOP技術(shù) |
| 文件頁(yè)數(shù)： | 3/13頁(yè) |
| 文件大小： | 402K |
| 代理商： | Q67040S4722 |
第1頁(yè)第2頁(yè)當(dāng)前第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
3
Rev. 2.2 Dec-04
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
26
29
299
29
1.2
1.4
2.6
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=50A,
V
GE
=0/15V,
R
G
= 7
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
1)
=103nH,
1)
=39pF
mJ
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
27
33
341
55
1.8
1.8
3.6
-
-
-
-
-
-
-
ns
T
j
=175
°
C,
V
CC
=400V,
I
C
=50A,
V
GE
=0/15V,
R
G
= 7
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
1)
=103nH,
1)
=39pF
mJ
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
2)
Includes Reverse Recovery Losses from IKW50N60T due to dynamic test circuit in Figure E.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q67040S4724 | LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY |
| Q67040-S4395 | Cool MOS Power Transistor |
| Q67040-S4396 | Cool MOS Power Transistor |
| Q67040S4647 | Thinq SiC Schottky Diode |
| Q67040-S4380 | Fast Switching EmCon Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q67040S4723 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY |
| Q67040S4724 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY |
| Q67040S4725 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY |
| Q67040S4726 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss IGBT in Trench and Fieldstop technology |
| Q67040-S4742-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS-TM POWER TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。