- 您現在的位置：買賣IC網 > PDF目錄361227 > Q67040S4725 (INFINEON TECHNOLOGIES AG) LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY PDF資料下載
參數資料
| 型號： | Q67040S4725 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY |
| 中文描述： | 低損耗IGBT的在戰壕和場終止技術 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 402K |
| 代理商： | Q67040S4725 |
Low Loss IGBT in Trench and Fieldstop
technology
Very low
V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5
μ
s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low
V
CE(sat)
Positive temperature coefficient in
V
CE(sat)
Low EMI
Low Gate Charge
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
1
Rev. 2.2 Dec-04
T
j,max
Marking Code
Package
Ordering Code
IGP50N60T
600 V
50 A
1.5 V
175
°
C
G50T60
TO-220
Q67040S4723
IGB50N60T
600 V
50 A
1.5 V
175
°
C
G50T60
TO-263
Q67040S4721
IGW50N60T
600 V
50 A
1.5 V
175
°
C
G50T60
TO-247
Q67040S4725
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (
V
CE
≤
600V,
T
j
≤
175
°
C)
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V
CE
I
C
600
100
50
V
A
I
Cpuls
-
150
150
V
GE
t
SC
±
20
5
V
μ
s
P
tot
T
j
T
stg
-
333
W
-40...+175
-55...+175
260
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
P-TO-247-3-1
(TO-220AC)
G
C
E
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
P-TO-220-3-1
(TO-220AB)
相關PDF資料 |
PDF描述 |
|---|---|
| Q67040-S4383 | Fast Switching EmCon Diode |
| Q67040-S4390 | Fast Switching EmCon Diode |
| Q67040-S4594 | HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode |
| Q67040-S4595 | HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode |
| Q67040-S4597 | HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q67040S4726 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss IGBT in Trench and Fieldstop technology |
| Q67040-S4742-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS-TM POWER TRANSISTOR |
| Q67040-S4751 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS⑩ Power Transistor |
| Q67041-A2212-A001 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast switching diode chip in EMCON-Technology |
| Q67041-A2825-A001 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast switching diode chip in EMCON-Technology |
發布緊急采購，3分鐘左右您將得到回復。